elektronische bauelemente BCP669A 1 w, 1.5 a, 180 v npn epitaxial planar transistor 12-feb-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a e c d b k h f g l j 1 2 3 4 rohs compliant product a suffix of -c specifies halogen & lead-free feature the BCP669A is designed for low frequency power amp lifier. absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 180 v collector to emitter voltage v ceo 160 v emitter to base voltage v ebo 5 v dc collector current i c 1.5 a pulse collector current i c 3 a collector power dissipation p d 1 w junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage bv cbo 180 - - v i c =1ma, i e = 0a collector to emitter breakdown voltage bv ceo 160 - - v i c =10ma, i b = 0a emitter to base breakdown voltage bv ebo 5 - - v i e =1ma, i c = 0a collector cut-off current i cbo - - 10 a v cb =160 v, i e = 0 a collector to emitter saturation voltage v ce(sat) - - 1 v i c =600ma, i b =50ma base to emitter saturation voltage v be(on) - - 1.5 v v ce =5v, i c =150ma dc current gain h fe1 60 - 200 v ce =5v, i c =150ma dc current gain h fe2 30 - - v ce =5v, i c =500ma transition frequency f t - 140 - mhz v ce = 5v, i c = 10ma, f = 100 mhz collector output capacitance cob - 14 - pf v cb = 10v, f=1mhz * pulse test: pulse width Q 380 s, duty cycle Q 2% classification of h fe rank b c h fe1 60~120 100~200 sot-89 millimeter millimeter ref. min. max. ref. min. max. a 4.4 0 4.6 0 g 0.40 0.58 b 3 . 94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20
elektronische bauelemente BCP669A 1 w, 1.5 a, 180 v npn epitaxial planar transistor 12-feb-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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